Whole device ELM simulations
نویسندگان
چکیده
منابع مشابه
Monte Carlo Device Simulations
As semiconductor devices are scaled into nanoscale regime, first velocity saturation starts to limit the carrier mobility due to pronounced intervalley scattering, and when the device dimensions are scaled to 100 nm and below, velocity overshoot starts to dominate the device behavior leading to larger ON-state currents. Alongside with the developments in the semiconductor nanotechnology, in rec...
متن کاملCoupled whole device simulations of plasma transport in tokamaks with the FACETS code
The FACETS project aims to provide computational tools for whole device simulation of tokamak transport for use in fusion applications. The framework provides flexibility by allowing users to choose the best model for a given physics target. Our goals are to develop accurate transport solvers using neoclassical and turbulent fluxes with varying degree of fidelity and computational complexity, i...
متن کاملELM physics and ELM mitigation in ITER
Edge Localised Modes are characteristic of the high performance, H-mode plasmas that are required for the attainment of Q = 10/500MW fusion power in the first phase of ITER operation. The energy released by a type I ELM, in good confinement plasmas, is typically 510% of the plasma stored energy; with low collisionality plasmas at the upper end of the range. Dimensional analysis, experiment and ...
متن کاملImprovement of the Drive Current in 5nm Bulk-FinFET Using Process and Device Simulations
Abstract: We present the optimization of the manufacturing process of the 5nm bulk-FinFET technology by using the 3D process and device simulations. In this paper, bysimulating the manufacturing processes, we focus on optimizing the manufacturingprocess to improve the drive current of the 5nm FinFET. The improvement of drivecurrent is one of the most important issues in ...
متن کاملImpact of scattering in ‘atomistic’ device simulations
In this paper we investigate the impact of scattering in ‘atomistic’ device simulation using 3D self-consistent Ensemble Monte Carlo simulations featuring random discrete dopants. We discuss the effect of the choice of short-range force correction strategy and integration time step on accuracy of such Particle-Particle ParticleMesh (PM) simulations. We illustrate the importance of the ‘ab-initi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Nuclear Materials
سال: 2009
ISSN: 0022-3115
DOI: 10.1016/j.jnucmat.2009.01.218